NOT RECOMMENDED FOR NEW DESIGN
USE DMN3030LSS
DMN3031LSS
0.03
0.06
0.02
V GS = 4.5V
0.05
0.04
V GS = 4.5V
T A = 150°C
V GS = 10V
0.03
T A = 125°C
T A = 85°C
0.01
0.02
T A = 25°C
T A = -55°C
0
0.1
1 10
100
0.01
0
3 6 9 12
15
0.03
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
V GS = 10V
1.6
1.5
I D , DRAIN-SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.025
0.02
T A = 150°C
T A = 125°C
T A = 85°C
1.4
1.3
1.2
V GS = 10V
I D = 10A
V GS = 4.5V
I D = 5A
1.1
1.0
0.015
T A = 25°C
T A = -55°C
0.9
0.8
0.01
0
3 6 9 12
15
0.7
-50
0 50 100 150
I D , DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Temperature
T J , JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
2.5
2.2
I D = 250μA
10,000
1,000
1.9
1.6
100
1.3
1
-50
-25 0 25 50 75 100 125 150
10
0
5 10 15 20 25
30
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Total Capacitance
DMN3031LSS
Document number: DS31650 Rev. 4 - 3
3 of 6
www.diodes.com
December 2012
? Diodes Incorporated
相关PDF资料
DMN3033LDM-7 MOSFET N-CH 30V 6.9A SOT-26
DMN3033LSD-13 MOSFET N-CH 30V 6.9A 8-SOIC
DMN3033LSN-7 MOSFET N-CH 30V 6A SC59-3
DMN3050S-7 MOSFET N-CH 30V 5.2A SOT-23
DMN3051L-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3052L-7 MOSFET N-CH 30V 5.4A SOT23-3
DMN3052LSS-13 MOSFET N-CH 30V 7.1A 8-SOIC
DMN3110S-7 MOSFET N-CH 30V 2.5A SOT-23
相关代理商/技术参数
DMN3033LDM 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LDM-7 功能描述:MOSFET NMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3033LSD 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIOD 30V 6.9A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIOD, 30V, 6.9A, SO8
DMN3033LSD-13 功能描述:MOSFET NMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3033LSN 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSN-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3033LSS-13 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3050S 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET